Atomically Thin Boron Nitride as an Ideal Spacer for Metal Fluorescence

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Metal Enhanced Fluorescence (MEF) greatly enhances luminescence for various applications, but its performance largely depends on the dielectric spacer, fluorophore, and plasma system. It is still difficult to produce a defective thick spacer that has an optimized thickness with sub-nanometer precision, allowing re-use without improvement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer, due to its multiple advantages over traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it significantly improves the amplification factor (up to ∼95 ± 5), sensitivity (10–8 M), Reproduction and Response (∼90% of plasma activity is maintained for 30 cycles after heating to 350 ° C in air) MEF. This can be attributed to its two-dimensional structure, thickness control at the atom level, defect-free quality, high affinity to aromatic fluorophores, good thermal stability and excellent permeability. Atomically thin BN distances can increase the use of MEF in various industries and industries.