Bilateral Lateral Heterostructures of Transition-Metal Dialcocogenides and Their Optoelectronic Response

Abstract image

Two-dimensional side heteroenzymes based on monolayer transfer-metal dicalcogenides (TMDs) have received more and more attention given that their direct size enhancement makes them attractive for optoelectronic applications. Although bilayer TMDs represent an indirect zone extension, their electrical properties are likely to be less sensitive to atmospheric conditions, greater mobility, and density of states than monolayers. Bilayers and single-layer single domain devices have already shown higher performance in radio frequency and foshaning applications. Despite these advantages, lateral heterostructures based on biliary domains are less well studied. Here we record the controlled synthesis of multilayer billet heterostructures based on MoS2-What2 And MoSe2-Good2 monodomains. Creating heterogeneous with the help of Sequential lateral margin-epitaxy occurring simultaneously in both the first and second layers. A phenomenological mechanism is proposed to explain the growth mode with self-limiting thickness that occurs in a certain window of growth conditions. Compared to their adult monolithic counterparts, bilateral lateral heteroconjugations give approximately 1 order of magnitude for higher rectification currents. They also show a clear photoelectric response with short-circuit currents ∼103 It is several times greater than the extraction of adult monoliths, except at room temperature electroluminescence. The improved performance of bilateral heterostructures greatly expands the potential of two-dimensional materials for optoelectronics.