Etch stops here – ScienceDaily


A team of multidisciplinary scientists and engineers at the University of Illinois at Urbana-Champagne discovered a new, more accurate method to create nanosome-based electromechanical equipments. The results of their research were published Nature Communications.

"The last five years were a huge golden spot where researchers found that we can create 2D material that is naturally just a molecule but can have many different electronic properties and engineers have almost any electronic device on each other," says Mechanical Science and Professor of Engineering I am Van van der Jende.

"The challenge was, however, we can make these structures a few molecules thicker, we can not sample them," he said.

Depending on any scale of the electronic device, layers are sorted by exact patterns to control current trends. "This concept combines many technologies like integrated circuits, but it will become smaller," Van der Jandes said.

"For example, how do you have an electrical contact with a molecular layer on three and five, but not at the level of four atomic levels?"

The only way to do this was to investigate.

Van Der Jond's new laboratory researcher Jangiup Schon conducted several experiments on one of XenF2's XenFone, when it hit other materials: "Hexagonal boron nitride (HB), electric insulator.

"Jangyup shoved both material into the etching chamber at the same time, and what he saw was that one layer graphene still exists but the thicker piece of hBN is completely etched away by the Xenon difluoride."

After the accidental discovery, the team saw the whereabouts of the etching agent to use the gauge ability.

"This discovery will allow us to sample dimensional structures between other materials such as hexagonal boron nitride (HB), transition metal dichalcogenes (TMDCs) and black phosphorus (BP), selectively and accurately without a single layer under the layer."

The atmospheric agent is exposed to XeF2, maintains its molecular structure and masks, or protects the layer below and actually stops etch.

"What we found is a molecular and atomic scale from a complex structure of patterns," he said.

In order to analyze new techniques, the group has created a simple graphic transistor that examines traditionally traditionally trattered surfaces that currently create disturbance in material, degrading activity.

"Because these molecules are on every surface if they do not have anything in the hall, this disturbance is the means to move the electrons and make electronic performance," Van der Jandes said. "In order to use the best possible device, you need a molecule of clutter with another two-dimensional material, such as helbbane coatings to keep the super flat and clean."

This is where new technology is so useful. The graphene molecule can remain encapsulated and intact, although etching is required for contact material, thus maintaining the material properties.

As the concept of conception, transistors used new techniques that were implemented on all other transactions that "showed them the best grant transistors in literature."

The following steps, said van der Zande, have to show how scalable technology and whether this will enable previously impossible devices. Can we take advantage of the method of self-arrest of this method to make millions of transmitters more than just one? Can we consider devices in the nanoscale in all three dimensions at the same time to prevent nanosubes from any disorder?

"Now that we have a reduction in material disorder, we are drawing on the ways to study more small features because we can do encapsulation and patterning at the same time," he said. "As a rule, when you try small features like nanoribbons of 2D material disorder begins to dominate, so devices do not work correctly."

"Grab the etch stop, as technology is called, will make the whole process of building the devices easier."

The survey carried out numerous disciplinary cooperation and shared materials for materials from research laboratory and micro and nanotechnology laboratories. The expert is faculty: Associate Professor of Physics and Director of Research and Research Center of Illinois Materials Research (MRSEC), Natia Mason for Electronic Transport; Elf Eterkin, Associate Professor of Mechanical Science and Engineering, for modeling interfaces; And Assistant Professor of Materials Science and Engineering, Pinshane Huang, for electronic microscopy. MRSEC provided funding for this research.

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