Ion-beam-based methods are widely used in synthesizing, modifying and synthesizing synthetic inputs in nanoscopic products. In reality, the interaction of the rays is fundamentally interesting because they identify multiple and time-sized processes that need to be quantified to achieve normal accuracy. Here we show magnesium oxide as a testbed semiconductor material that has a kinetic energy regime in which electronic effects are usually neglected, the proton beam effectively with oxygen vacuum electrons. We quantitatively describe electronic distribution and development of ionic dynamics using the first principles of techniques. Unlike the different picture, we see that most of the activated electrons are located locally in oxygen. By using these results, we will take care of the ultrasonic dynamics of ultrasound over time directly in the ion diffusion migration barriers in semiconductors and will detect a diffusion mechanism that solves hot electrons. Our quantitative simulations depend on predicted ion speeds, suppose that it uses a clear sample manipulation through the expansion of sample diffusion with deep, neutral, internal fault.