Non-linear unilateral emission before and after switching from GaAs Nanoantennas

Abstract image

High index III – V semiconductor nanotubes have received increasing attention in the last few years with the activation of improved nonlinear light interactions. However, the complexity of nonlinear radiation profiles places severe limitations on practical applications, such as optical communications and integrated optoelectronic devices. These difficulties include the lack of unilateral nonlinear emission and the serious challenges of moving forward and backward exhaust due to the tensor structure of the III-V nanoparticles. Here, we address both issues with a nanoantennas nonlinear tenor. Special nonlinear tensor properties of zinc-blender material can be used in nonlinear properties engineering, along with different crystalline orientations, through the growth of nanoparticles. Based on the nonlinear multipolar effect, we developed and fabricated (110) known GaAs nanoantennas, with engineering tensorial properties, inserted into a transparent low-index material. Our technique provides an approach not only for unilateral second harmonic generation (SHG) or backward emission, but also for the transition from one to the other. Most importantly, the SHG emission direction change can only be achieved by polarizing the incident light without any antenna or physical environment change. This characteristic has the advantage over other nonlinear nanotubes, including (100) – and (111) known III – V counterparts or in silicon and germanium related nanoparticles. Indeed, (110) -gakartuli nanoantebi engineering will allow to carry out non-linear nanopotonuri systems, including non-linear "hugensis metaskursiebi" and offers interesting opportunities arainlainuri nanopoteknikis various technologies, such as routing and nanoshenis light light sources, as well as multi-planar optical elements clash pederast.