Room temperature in Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation


Abstract imagery

Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy and more. In this study, we notice that the MWIR room temperature temperature of MWIR consists of a vertical selective area of ​​InAsSb nanowire photoabsorber arrays with large bandgap InP substrate with nanoscala plasma gras. We do this by inadequate recording, which introduces the INAsSb nanowire surfaces ex situ al2Oh3 Pushing the shells. Transitional simulations under extremely low surface record speed 103 Cm / year We will still get the room temperature photoluminescence emission from INAsSb nanos, which moves all MWIRs from 3 to 5 μm. The dry-etching process evolves to reveal only the most nanowire facets of metal contacts, with sidewalls consistently2Oh3 Shells that provide superior quantum efficiency. Based on these methods we care for nanowire photodetectors with optimized pitch and diameter and demonstrate room temperature spectral response MWIR detection signatures up to 3.4 μm. The results of this work indicate that insufficient focus planes on MWIR can be created for low-cost substations substations for highly compact and fully integrated disclosure platforms with nanostructured absorption.

Support information is free at ACS publications website: DOI: 10.1021 / acs.nanolett.8b04420.

  • Increases calibration, photoluminescence transition modeling, InSb detector spectral reaction, al stability2Oh3 Plea shell, al2Oh3 Pneumatic shells, CHF redeposition3 byproducts, reliability of dry etching process, complete fraud process, and more device characterizations (PDF)