Scientists and Japanese universities jointly acquired mechanisms that use semiconductor material degradation, which is used in electronic devices at Iago Technologies Institute (NITech). Underlying concrete science on how material degradation is, they create a potential discovery that may impede material degradation.
The study was published Journal of Applied Physics September 2018. Scientists used silicone carbide (SiC) material for experimentation. SiC becomes a more popular alternative for standard semiconductor materials for electronic devices. The research is based on the specific type SiC material that is characteristic of its structure or 4H-SiC. This material has been revealed in both photoluminescence as well as different temperatures as an opportunity to create specific types of deformations that cause degradation of SiC-based devices. Scientists were able to observe how these deformations are actually at the atomic level.
"The measurement of speed from which electromagnetic particles move into 4H-SiC material regions where the nuclear structure is observed, which allows to detect the paths of degradation of SiC-based devices such as electronic systems," notes Dr. Masashi Kato, Associate Professor of Frontier Research Institute of Materials Science NITech.
In order to better understand the latest mechanism of atomic deforming, causing degradation, researchers used photoluminescence to cause electric charge particles to move and increased speeds. They were looking for the specific factors that may be limited to the particle movement, including the material used.
They also saw the rising effects of temperature, namely how high the temperature will increase or decrease the deformation speed.
According to Dr. Kato's opinion, the existence of certain types of atomic deformation, which is the cause of material degradation, is especially problematic for SiC-based energy equipment. "Although the specific SiC device functions, the material deformation atoms that degrade, the process according to which the deformation of these atoms is unknown is known, however, as well as in material where the material deficiencies have already been attributed to the atomic deformation "- he says.
So far, similar experiments have been conducted by other researchers, with no results. Consequently, the effect of photoluminescence experiments indicates that lonely Shockley stacking faults (1SSFs) and partial dislocations (PDS) are faster than those in regions 1SSF 4H-SiC. Such rapid recurrence promotes the device's degradation by 1SSF. In addition, 1SSF expansion rate increases with temperature increases.
As such, they will pave the way to overcome the degradation of SiC devices. This, in turn, may result in higher quality and more enduring devices.
In addition to these lines, the authors claim that their future research activities will focus on preventing SiC-based devices from degradation and creation of devices.
Researchers identify the key to the future generation of electrons
Masashi Kato and others. Shockley stacking flaws and 4H-SiC partial dislocation of the carrier recording, Journal of Applied Physics (2018). DOI: 10.1063 / 1.5042561